Fujitsu America Offering 65 nm GPS RF Design Kits

November 12, 2008

Fujitsu's U.S. subsidiary Fujitsu Microelectronics America Inc. has begun offering 65-nanometer (nm) RF CMOS device manufacturing services with the introduction of a process design kit (PDK) for GPS, as well as Bluetooth, cellular, wireless audio/video, wireless LAN, and optical communications chips.

RF CMOS platforms from Fujitsu are now available in both 90 nm and 65 nm designs. The transistor models of the RF CMOS PDKs include both advanced PSP and traditional BSIM models. Based on the Fujitsu low-leakage 90 nm and 65 nm analog/RF CMOS process technologies, the PDKs include a set of parameterized cells and toolkits for active and passive devices. The flexible inductor synthesis toolkit automatically generates precise and scalable inductor layout and models for high-speed analog and RF circuits, according to Fujitsu.

"Our platforms ensure that our customers achieve first-pass functional silicon at the 90- and 65-nanometer process nodes for high-performance, low-power RF CMOS IC designs, avoiding costly re-spins and low yields," said Steve Della Rocchetta, vice president of the semiconductor manufacturing services business group at Fujitsu Microelectronics America.

"The main advantage of the Fujitsu RF CMOS processes is the ability to integrate complex logic, analog and RF circuits into single chip," said Tatsuya Yamazaki, vice president in charge of the ASIC/COT business for Fujitsu Microelectronics Ltd. in Japan. "Built on the Fujitsu advanced process technologies, accurate device models, and comprehensive IP portfolios, the Fujitsu low-power RF CMOS technology platforms are exceptional choices for next-generation, high-volume wireless applications."

Both the 90 nm CS100A-LL and 65 nm CS200L PDKs are available now, the company said.

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